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Diode Bridge Modules

TypeVRRM
V		ID(AV)
A		TC
°C;		VF(Per Diode)
V		@IF
A		IFSM(10ms)
A		VTO(Tj = Tj max)
V		rt
mΩ		Rthj-hs
°C;/W		Tj max
°C;		ViSO
V		Datasheet
RI 8BU 30400-1800301101.3803700.85120.5451252500Download
RI 8BU 60400-180060881.615010000.8550.3001252500Download
RIBU 52400-180050991.81505000.8580.3751502500Download
RIBU 72400-1800701011.61507500.8550.2751502500Download
RI 9BU 25400-1800301101.3803700.85120.2501252500Download
RI 9BU 55400-1800521001.75753700.85120.2001252500Download

TypeID(AV)
A		TC
°C;		VRRMRange
V		IFSM(10ms)
A		VT(Per SCR) / VF(Per Diode)
V		@IF
A		VGT
V		IGT
mA		dv/dt
V /µSec;		di/dt
A /µSec;		Rth JC
°C;/W		TJ Range
°C;		Datasheet
RI 8BKW 414188800-14004702.3752.0605001501-40 to 125Download
RI 8BKW 606185800-14004702.3752.0605001501-40 to 125Download

TypeVRRM
V		ID(AV)
A		TC
°C;		VF(Per Diode)
V		@IF
A		IFSM(10ms)
A		VTO(Tj = Tj max)
V		rt
mΩ		Rthj-hs
°C;/w		TjMax
°C;		ViSO
V		Datasheet
RI 8TU 30400-180040901.3803700.85120.431252500Download
RI 8TU 60400-1800601021.615010000.8550.1671252500Download
RI 8TU 100400-1800100931.3515011500.8550.141252500Download
RITU 62400-1800601101.81505000.8580.251502500Download
RITU 82400-1800801101.61507500.8550.1831502500Download
RI 9TU 25400-1800251101.3803700.85120.251252500Download
RI 9TU 55400-1800551001.75753700.85120.21252500Download
RI 9TU 110400-18001101001.3515011500.8540.151502500Download
RITU 160400-18001601001.6530018000.8530.111502500UNDER UPDATION
TypeIF(AV)
A		@TC
°C;		VRRM RANGE
V		IFSM (10ms)
A		VFM
V		@IFM
A		trr
ŋs		Rth JC
°C;/W		Tj
°C;		Datasheet
RIRP200..F200100200-40020001.3200900.320150Download
RIRP300..F300100200-40025001.75300900.320150UNDER UPDATION
RIRP400..F400100200-40025001.95400900.320150UNDER UPDATION

About Ruttonsha

Ruttonsha International Rectifier Ltd. (BSE : RIR) is a global landmark in Semiconductors having two and a half decades of technical collaboration with International Rectifier Corp., U.S.A., for manufacturing of Power Semiconductors. The Company is having ascendancy of IR (International Rectifier) technology as well as access to developmental and technological expertise of Silicon Power Corporation, U.S.A. – a leading American Corporation providing high power semiconductor devices through continuous R & D efforts.

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