High Voltage Modules

Diode – Diode

Type	I_F(AV) A	@TC °C;	V_RRMRANGE V	I_FSM(10ms) A	V_FM V	@I_FM A	V_O(Tj=Tj max) V	r mΩ	R_thJC °C/W	R_thCS °C;/W	T_jMax °C;	Datasheet
IRKD231	230	100	1400-2600	7015	1.29	722	0.79	0.63	0.160	0.035	135	Download
IRKD320	320	100	4600-6500	7000	2.40	1570	0.95	1.10	0.068	0.020	135	Download
IRKD435	435	85	3000-4200	12000	2.30	2100	0.85	0.33	0.065	0.020	135	Download

Thyristor – Thyristor

Type	I_T(AV) / I_F(AV) A	@TC °C;	V_RRM RANGE V	I_TSM / _IFSM A	V_TM / V_FM V	@I_TM / I_FM A	V_O(Tj=Tj max) V	r mΩ	V_{GT_V}	I_GT mA	dv/dt V / µs	di/dt A / µs	R_thJC °C;/W	R_thcs °C;/W	T_jMax °C;	Datasheet
IRKT136	130	85	1400-2600	3200	1.66	408	0.98	1.62	3.03	200	500	100	0.2	0.035	125	Download
IRKT160	160	85	2000-3600	4000	2.6	1000	1.2	2.3	2	200	500	100	0.125	0.04	125	Download
IRKT185	185	85	1500-3000	7500	2.6	1000	1.14	0.78	2	200	500	100	0.125	0.04	125	Download
IRKT240	240	85	2800-3600	5400	3.43	1200	1.17	1.7	2	200	500	100	0.078	0.02	125	Download

Thyristor – Diode

Type	I_T(AV) / I_F(AV) A	@TC °C;	V_RRM RANGE V	I_TSM / I_FSM A	V_TM / V_FM V	@I_TM / I_FM A	V_O(Tj=Tj max) V	r mΩ	V_GT V	I_GT mA	dv/dt V / µs	di/dt A / µs	R_thJC °C;/W	R_thcs °C;/W	T_jMax °C;	Datasheet
IRKH136	130	85	1400-2600	3200	1.66	408	0.98	1.62	3.03	200	500	100	0.2	0.035	125	Download
IRKH160	160	85	2000-3600	4000	2.6	1000	1.2	2.3	2	200	500	100	0.125	0.04	125	Download
IRKH185	185	85	1500-3000	7500	2.6	1000	1.14	0.78	2	200	500	100	0.125	0.04	125	Download
IRKH240	240	85	2800-3600	5400	3.43	1200	1.17	1.7	2	200	500	100	0.078	0.02	125	Download

Single Diode

Type	I_F(AV) A	@TC °C;	V_RRM RANGE V	I_FSM A	V_FM V	@I_FM A	V_O(Tj=Tj max) V	r_t mΩ	R_thJC °C;/W	R_thCS °C;/W	T_jMax °C;	Datasheet
IRKE 800	800	80	800 – 1200	19000	2.50	3500	1.15	0.285	0.046	0.020	125	Download
IRKE 950	950	100	3600 – 4400	35000	1.78	3000	0.85	0.280	0.042	0.010	150	Download
IRKE 1070	1100	100	800 – 1800	41000	1.15	3000	0.75	0.073	0.048	0.015	150	Download

Single Thyristor

Type	I_T(AV) A	@TC °C;	V_RRM RANGE V	I_TSM A	V_TM V	@I_T A	V_O(Tj=Tj max) V	r_t mΩ	V_GT V	I_GT mA	dv/dt V / µs	di/dt A / µs	R_thJC °C;/W	T_jMax °C;	Datasheet
IRKHT 530	530	85	2600 – 3600	22000	2.78	3000	1.05	0.57	3	250	1000	80	0.045	125	Download
IRKHT 800	819	85	1200 – 1800	30000	1.55	3000	0.82	0.17	3	250	1000	200	0.042	125	Download

About Ruttonsha

Ruttonsha International Rectifier Ltd. (BSE : RIR) is a global landmark in Semiconductors having two and a half decades of technical collaboration with International Rectifier Corp., U.S.A., for manufacturing of Power Semiconductors. The Company is having ascendancy of IR (International Rectifier) technology as well as access to developmental and technological expertise of Silicon Power Corporation, U.S.A. – a leading American Corporation providing high power semiconductor devices through continuous R & D efforts.

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